Fabrication of α-Ga2O3 thin films using α-AlxGa1−x)2O3 buffer layers and its crystal structure properties

摘要

Corundum-structured α-Ga2O3 is a prospective material for power devices because it has expectable large bandgap and high breakdown field. We have shown the fabrication of α-Ga2O3 thin films on sapphire substrates, but many dislocations were confirmed in the α-Ga2O3 thin films. In this presentation, we report the growth of α-Ga2O3 thin films on α-(AlxGa1-x)2O3 buffer layers by mist CVD, for improving the crystallinity of the α-Ga2O3 thin films.