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α-(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition

机译：α-（ALXGA1-X）2O3单层和异质结构缓冲剂，用于通过雾化学气相沉积生长导电Sn掺杂α-Ga2O3薄膜

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Giang T. Dang; Shota Sato; Yuki Tagashira; Tatsuya Yasuoka; Li Liu; Toshiyuki Kawaharamura;
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1. α-(AlxGa1?x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition [J] . Giang T. Dang, Shota Sato, Yuki Tagashira, APL Materials . 2020,第10期

机译：α-（ALXGA1≤x）2O3单层和异质结构缓冲剂，用于通过雾化学气相沉积生长导电Sn掺杂α-Ga2O3薄膜
2. Successful Growth of Conductive Highly Crystalline Sn-Doped α-Ga_2O_3 Thin Films by Fine-Channel Mist Chemical Vapor Deposition [J] . Toshiyuki Kawaharamura, Giang T. Dang, Mamoru Furuta Japanese journal of applied physics . 2012,第4Issue1期

机译：细通道雾化学气相沉积法成功地生长导电性高结晶掺Snα-Ga_2O_3薄膜
3. Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga2O3 thin films fabricated by mist chemical vapor deposition [J] . Yuji NAKABAYASHI, Satoru YAMADA, Satoshi ITOH, Journal of the Ceramic Society of Japan . 2018,第11期

机译：前驱体浓度和生长时间对薄雾化学气相沉积法制备的α-Ga2O3薄膜表面形貌和结晶度的影响
4. Heteroepitaxial growth of ε-Ga2O3 thin films on cubic (111) GGG substrates by mist chemical vapor deposition [C] . Daisuke Tahara, Hiroyuki Nishinaka, Shota Morimoto, 2017 International Meeting for Future of Electron Devices, Kansai . 2017

机译：薄雾化学气相沉积法在立方（111）GGG衬底上异质外延生长ε-Ga2O3薄膜
5. Synthesis of novel materials by pulsed laser deposition and chemical vapor deposition: Part I: Energetic deposition and stability of carbon nitride thin films. Part II: Catalytic growth of one dimensional materials and devices. [D] . Hu, Jiangtao. 2000

机译：通过脉冲激光沉积和化学气相沉积合成新型材料：第一部分：氮化碳薄膜的能量沉积和稳定性。第二部分：一维材料和装置的催化生长。
6. Large-Area Growth of Uniform Single-Layer MoS2 Thin Films by Chemical Vapor Deposition [O] . Seung Hyun Baek, Yura Choi, Woong Choi 2015

机译：通过化学气相沉积法大面积生长均匀的单层MoS2薄膜
7. Large-Area Growth of Uniform Single-Layer MoS Thin Films by Chemical Vapor Deposition [O] . 2015

机译：通过化学气相沉积法大面积生长均匀的单层MoS薄膜

α-(AlxGa1−x)2O3 single-layer and heterostructure buffers for the growth of conductive Sn-doped α-Ga2O3 thin films via mist chemical vapor deposition

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