Bright LEDs using position-controlled MOCVD growth of InP nanopillar array on a silicon substrate

摘要

We demonstrate catalyst-free metal organic chemical vapor deposition (MOCVD) growth of position-controlled InP nanopillars on Si substrates for the first time. The nanopillars were grown at a low growth temperature of 460°C, compatible with CMOS back-end integration and resulting arrays of nanopillars show high yield of ~97%. Nanopillars grow vertically, in single-phase, wurtzite crystalline form. The taper angle of the nanopillars can be engineered by tuning growth parameters. Site-controlled nanopillars show excellent optical properties- narrow linewidth (~50 meV), long lifetimes ~4 ns, and high internal quantum efficiency. Core-shell p-n junction devices were grown on n-Si by introducing dopants. InGaAs/InP quantum wells were incorporated in the active region of the diode heterostructure to obtain silicon transparent electroluminescence (λ ~ 1500nm) from the nanopillar LED. Position controlled InP-based diodes on silicon have tremendous implications for on-chip emitters and detectors in Si photonics links.