Modeling and analysis of Double Gate Ferroelectric Junctionless (DGFJL) transistor

摘要

In this paper we have developed an analytical model for Double Gate Ferroelectric Junctionless (DGFJL) transistor using Landau's theory and parabolic potential approximation. We have obtained expressions for surface potential and electric field and have demonstrated negative capacitance effect provided by ferroelectric layer. The results also demonstrate the step-up conversion capability of this device, thereby signifying improved gate control and the suitability of this device for low voltage/low power switching applications.