China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
China Electronics Technology Group Corporation No.38 Research Institute, Hefei 230088, P.R.China;
Numerical simulation; photoresponse; GaN; ultraviolet; photodetector; doping; schottky; device design;
机译:具有薄P-GaN接触层的高深紫外量子效率GaN P-I-N光电探测器
机译:具有通过脉冲激光沉积生长的高质量CSPBBR3薄膜的N-ZnO / P-GaN异质结紫外光探测器的增强光蚀刻
机译:可见盲GaN / AlGaN p-i-n紫外光电探测器的光响应研究
机译:P-GaN层掺杂对GaN的P-I-N紫外光探测器光响应的影响
机译:通过有源层优化和等离子体纳米结构在有机紫外光探测器中调谐和增强光谱光响应和增强
机译:基于P-I-N结基于外延电子堵塞层的PEROVSKITE光电探测器
机译:层状n掺杂石墨烯量子点中的深紫外到近红外发射和光响应
机译:霍尔和光响应测量与薄氧化锌薄膜的紫外和近紫外降解有关