A K-band high gain, low noise figure LNA using 0.13 ??m logic CMOS technology

摘要

A two stage cascode low noise amplifier using tapered inductors with optimized quality factors was designed in a 130 nm logic CMOS process. The K-band (24 GHz-26.5 GHz) LNA consumes 11.25 mW DC power for a supply voltage of 1.5 V, achieves 27.5 dB peak transducer gain and 3.88 dB noise figure (NF) at 25 GHz. S11 and S22 at 25 GHz are ???13 dB and ???10 dB, respectively. It achieves a minimum NF of 3.5 dB at 24 GHz and within the entire frequency band of interest the NF is less than 5 dB. IIP3 of the LNA is ???11 dBm and the LNA including pads occupies an area of 830??m ?? 800??m.