In-situ TEM observation of ReRAM switching

机译：ReRAM切换的原位TEM观察

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摘要

Structural changes of a ReRAM (resistive random access memory) during the resistive switching was successfully observed for the first time by in-situ TEM. We succeeded the observation for the three kinds of ReRAM devices with different ReRAM materials.

机译：通过原位TEM首次成功观察到电阻切换期间ReRAM（电阻随机存取存储器）的结构变化。我们成功地观察了具有不同ReRAM材料的三种ReRAM设备。

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来源
《2014 IEEE International Meeting for Future of Electron Devices, Kansai》|2014年|1-2|共2页
会议地点 Kyoto(JP)
作者
Takahashi Yasuo; Arita Masashi;
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作者单位

Graduate School of Information Science and Technology, Hokkaido University, Sapporo, 060-0814, Japan;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Electrodes; Random access memory; Resistance; Switches; Tin; Transmission electron microscopy; ReRAM; Resistive random access memory; Transmission electron microscopy; in-situ TEM;

机译：电极;随机存取存储器;抵抗性;开关；锡;透射电子显微镜； ReRAM;电阻式随机存取存储器；透射电子显微镜；原位TEM;

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专利

1. Filamentary switching of ReRAM investigated by in-situ TEM [J] . Arita Masashi, Tsurumaki-Fukuchi Atsushi, Takahashi Yasuo Japanese journal of applied physics . 2020,第SG期

机译：由原位TEM调查RERAM的丝状切换
2. Development of TEM Holder Generating In-Plane Magnetic Field Used for In-Situ TEM Observation [J] . Masashi Arita, Ryohei Tokuda, Kouichi Hamada Materials transactions . 2014,第3期

机译：TEM支架产生平面磁场用于原位TEM观测的开发
3. In-situ TEM study of domain switching in GaN thin films [J] . Wang Baoming, Wang Tun, Haque Aman, Applied Physics Letters . 2017,第11期

机译：GaN薄膜中域转换的原位TEM研究
4. In-situ TEM observation of ReRAM switching [C] . Takahashi Yasuo, Arita Masashi Institute of Electrical and Electronics Engineers International Meeting for Future of Electron Devices, Kansai . 2014

机译：原位TEM观察Reram切换
5. Exploring Mechanisms of Ferroelectric Switching in Real Time Using In Situ TEM. [D] . Winkler, Christopher Reid. 2014

机译：利用原位TEM实时探索铁电开关的机理。
6. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si-ZnO heterostructure revealed by in-situ TEM [O] . Lei Zhang, Liang Zhu, Xiaomei Li, -1

机译：基于TEM的p + -Si / n-ZnO异质结构的单二极管一电阻存储器中的电阻切换机制
7. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM [O] . Lei Zhang, Liang Zhu, Xiaomei Li, 2017

机译：基于P + -SI / N-ZnO异质结构的一种二极管 - 一个电阻存储器的电阻切换机构，由原位TEM透露
8. In-Situ TEM-STM Observations of SWCNT Ropes/Tubular Transformations [R] . Sola, F., Lebron-Colon, M., Ferreira, P. J., 2010

机译：sWCNT绳索/管状转换的原位TEm-sTm观察

In-situ TEM observation of ReRAM switching

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