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Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

机译：基于P + -SI / N-ZnO异质结构的一种二极管 - 一个电阻存储器的电阻切换机构，由原位TEM透露

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Lei Zhang; Liang Zhu; Xiaomei Li; Zhi Xu; Wenlong Wang; Xuedong Bai;
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2. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM [J] . Lei Zhang, Liang Zhu, Xiaomei Li, Scientific reports. . 2017,第1期

机译：基于P + -SI / N-ZnO异质结构的一种二极管 - 一个电阻存储器的电阻切换机构，由原位TEM透露
3. Resistive switching characteristics of ZnO-graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture [J] . Yongsung Ji, Sang-A Lee, An-Na Cha, Organic Electronics . 2015,第mara期

机译：ZnO-石墨烯量子点的电阻开关特性及其作为具有一个二极管一电阻架构的有机存储单元的有源组件的用途
4. Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory [J] . Jiun-Jia Huang, Tuo-Hung Hou, Chung-Wei Hsu, Japanese journal of applied physics . 2012,第4ISSUE2期

机译：灵活的一二极管一电阻器纵横开关电阻切换存储器
5. Investigation of switching mechanism in HfO_2-based oxide resistive memories by in-situ Transmission Electron Microscopy (TEM) and Electron Energy Loss Spectroscopy (EELS) [C] . T. Dewolf, D. Cooper, N. Bernier, International Symposium for Testing and Failure Analysis . 2017

机译：原位透射电子显微镜（TEM）和电子能量损失光谱（EELS）通过原位透射电阻存储器切换机理研究
6. Control over variability in nonvolatile hafnium-oxide resistive-switching memory based on modeling of the switching processes [D] . Butcher, Brian Jerad. 2013

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7. Resistive switching mechanism in the one diode-one resistor memory based on p+-Si-ZnO heterostructure revealed by in-situ TEM [O] . Lei Zhang, Liang Zhu, Xiaomei Li, -1

机译：基于TEM的p + -Si / n-ZnO异质结构的单二极管一电阻存储器中的电阻切换机制
8. Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017) [O] . Kyung Jean Yoon, Gun Hwan Kim, Sijung Yoo, 2017

机译：下一代内存：双层堆叠的一个二极管 - 一个电阻开关内存横杆阵列，极高的整流比为109（ADV。电子。Matter。7/2017）

Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

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