ReRAM WITH A MECHANICAL SWITCH AS A SELECTOR, ARRAY STRUCTURE INCLUDING THE SAME AND FABRICATION METHOD FOR ReRAM WITH A MECHANICAL SWITCH AS A SELECTOR

摘要

Disclosed is a variable resistance nonvolatile memory device having a mechanical switch, which is included in an array structure, as a selector wherein the variable resistance nonvolatile memory device having the mechanical switch as the selector comprises a first electrode layer; a variable resistance layer formed on the first electrode layer; a second electrode layer formed on the variable resistance layer; an insulation supporting part formed on the second electrode layer to form an exposed part at the middle of the upper surface of the second electrode layer; and a switch member formed on the insulation supporting part by crossing the upper side of the exposed part to be separated from the exposed part. The switch member is varied to touch the exposed part when voltage difference, which is equal or or more than a predetermined value, occurs and is connected to the first electrode layer.