Characterization of random telegraph noise and its impact on reliability of SRAM sense amplifiers

摘要

A new method for the analysis of multilevel Random Telegraph Noise (RTN) signals has been recently presented, which can also be applied in the case of large background noise. In this work, the method is extended to evaluate the RTN-related variation of the device drain current. The RTN parameters obtained from experimental traces are used to simulate the impact of RTN in the drain current of pMOS transistors in SRAM voltage sense amplifiers. The results show that RTN can lead to read errors of the stored data.