Investigation of high temperature process for III-V/SOI hybrid photonic devices with AlInAs oxidation current confinement layer

摘要

In order to realize AlInAs oxidation current confinement structures for III–V/SOI hybrid photonic devices, oxidation condition was investigated. With 4-hours ramp up time and 4-hours ramp down time, 63% of PL intensity was maintained even after the oxidation process at 530°C.