Optimization of Leakage Current in SRAM Cell Using Shorted Gate DG FinFET

摘要

Scaling of conventional CMOS circuit tends to have short channel effects due to which, effect such as drain induced barrier lowering, hot electron effect, punch through etc takes place and hence leakage increases in the transistor. To minimize short channel effects, double gate FinFET is used. FinFET may be the most promising device in the LSI (large scale integration) circuits because it realizes the self-aligned double-gate structure easily. In this paper, six transistors SRAM cell is designed using the tied gate DG FinFET. Sub-threshold leakage current and gate leakage current of internal transistors are observed and compared with the conventional structure of 6T SRAM cell. DG FinFET SRAM cell is applied with self controllable voltage level technique and then leakage current is observed. Simulation is performed with cadence virtuoso tool in 45 nm technology. The total leakage of DG FinFET SRAM cell is reduced by 34% after applying self controllable voltage level technique.