A 2.6 GHz Class-E power amplifier design

摘要

A design of switching power amplifier (PA) with high efficiency and considerable output power is reported. This power amplifier is based on commercial available GaN HEMT de vice. Design process based on Source/Load Pull technique is described in detail. The simulation results show that the proposed amplifier achieves drain efficiency of 85%, power added efficiency of 82.5% and 40 dBm output power at 2.6 GHz. This power amplifier could be applied to TD-LTE base station.