Structural and electrical characterization of the 4H-SiC based junction field effect transistor (JFET)

摘要

The main focus of our work is the characterization and structural study of 4H-silicon carbide (SiC) normally-off vertical junction field effect transistor (JFET). We will determine the experimental static Ids-Vds characteristics under temperature variation. In order to achieve a better description of SiC and metal interface properties, many interesting parameters related to the material and to the device performance have been obtained from these measurements. Simulation has been used to correlate obtained results to physical parameters. When the temperature increases to 300°C, the RDS(ON) increase to 700 MΩ and the saturation drain source current decreases up to 14A.