Analytical study of complementary memristive synchronous logic gates

摘要

This paper describes an analytical study of synchronous logic gate design based on hybrid structure with MOS and resistive switching non-volatile memories (RS-NVMs). This type of structure allows ultra-low power consumption during power down, while often-used data are saved in RS-NVM cells. The parallel data sensing achieves low-power and fast computation time. The logic gate construction theory, from Boolean equation to hybrid MOS/RS-NVM tree, is deeply detailed. Read and write design guideline, regarding RS-NVM and MOS resistance balance are investigated. Practical implementation is given through transient simulations based on two memory technologies: STT-MRAM and OxRRAM to validate the concept by using CMOS 40 nm design kit and memory compact models.