Design of a power amplifier based on GaN HEMTs at Ka-band

摘要

A GaN power amplifier which can be applied to Ka-band is simulated and studied in the paper. Based on typical AlGaN/GaN HEMT (high electron mobility transistor) pattern, the transistor model is set up by the Silvaco TCAD. The on-chip spiral inductor and metal-insulator-metal (MIM) capacitance are also simulated in HFSS respectively. Extracted from the modal above, s-parameters are used to design a power amplifier circuit. The final result shows that the output power can reach 21.4dBm and PAE is 18% with 25V bias voltage and 9mA static output current at 35GHz when the input power is 10dBm.