Ionizing radiation induced leakage current in the PD-SOI devices with different layout structures

摘要

Total dose dependence of leakage current in the partially depleted SOI devices with different layout structures are presented. The experimental results show that the leakage currents in the irradiated PD-SOI device with standard structure are significant affected by trench sidewall leakage, but the leakage currents in the enclosed gate and H gate structures are more affected by the conduction of back gate parasitic transistor and gate induced drain leakage currents.