Modeling of stress-induced leakage current and impact ionization in MOS devices

摘要

Stress-induced leakage current (SILC) modeling requires consistency with a variety of experimental observations, like steady-state leakage, transient discharge currents and impact ionization characteristic observed after stress. Here we present a SILC model based on trap-assisted tunneling and recombination at deep-levels in the oxide, which suc- cessfully reproduces all SILC features. Based on a detailed analysis of SILC data, a two-band defect distribution is determined, in which the low-and high-energy ranges account for stationary SILC and transient currents, respectively.