Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

机译：应力源引起的应力对应变nMOSFET的热载流子可靠性的影响

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In this study, the nMOSFETs with contact-etch-stop-layer (CESL) stressor and SiGe channel have been fabricated with a modified 90-nm technology. The performance of nMOSFETs and stress distribution in the channel region have been investigated. The hot carrier reliability of the SiGe-channeled nMOSFETs with various CESL nitride layers has also been extensively studied. In addition, the impact of stress induced by CESL stressor and SiGe-channel on hot-carrier reliability of the strained nMOSFETs has been analyzed through experimental measurements and stress simulation results.

机译：在这项研究中，采用改良的90纳米技术制造了具有接触蚀刻停止层（CESL）应力源和SiGe沟道的nMOSFET。已经研究了nMOSFET的性能和沟道区域中的应力分布。还对具有各种CESL氮化物层的SiGe沟道nMOSFET的热载流子可靠性进行了广泛的研究。此外，通过实验测量和应力模拟结果，分析了CESL应力源和SiGe沟道引起的应力对应变nMOSFET的热载流子可靠性的影响。

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来源
《2013 IEEE 5th International Nanoelectronics Conference.》|2013年|p.89-90|共2页
会议地点 Singapore(SG);Singapore(SG)
作者
Hsu H. W.; Huang H. S.; Chen S. Y.; Wang M. C.; Li K. C.; Lin K. C.; Liu C. H.;
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作者单位

Institute of Mechatronic Engineering, National Taipei University of Technology (NTUT), Taiwan, ROC;

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会议组织
原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;微电子学、集成电路（IC）;
关键词
Contact-etch-stop-layer (CESL); SiGe channel; hot carrier reliability;

机译：接触蚀刻停止层（CESL）; SiGe通道;热载流子可靠性;;

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1. Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs [J] . K. C. Lin, M. J. Twu, P. C. Juan, International Journal of Nanotechnology . 2014,第1a4期

机译：应力源引起的应力对应变nMOSFET的热载流子可靠性的影响
2. Impact of hot-carrier stress on gate-induced floating body effects and drain current transients of thin gate oxide partially depleted SOI nMOSFETs [J] . J.M. Rafi, E. Simoen, A. Mercha, Solid-State Electronics . 2005,第9期

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3. Stress Impact of a Tensile Contact Etch Stop Layer on Nanoscale Strained NMOSFETs Embedded with a Silicon-Carbon Alloy Stressor [J] . Chang-Chun Lee, Shu-Tong Chang Journal of nanoscience and nanotechnology . 2012,第7期

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4. Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs [C] . Hsu H. W., Huang H. S., Chen S. Y., IEEE International Nanoelectronics Conference . 2013

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Impact of stress induced by stressors on hot carrier reliability of strained nMOSFETs

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