Analysis of dummy-gate dual-directional SCR (dSCR) device for ESD protection

机译：用于ESD保护的伪栅极双向SCR（dSCR）器件的分析

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A novel dual-directional silicon controlled rectifier (dSCR) device with dummy gate for electrostatic discharge (ESD) protection is presented. Compared with the traditional dSCR, the novel device has the desirable characteristics of dual-directional conduction, a low ESD trigger voltage, an adjustable ESD holding voltage and non-consumption of the extra area.

机译：提出了一种新型的带有伪栅极的双向可控硅整流器（dSCR），用于静电放电（ESD）保护。与传统的dSCR相比，该新型器件具有双向传导，低ESD触发电压，可调节的ESD保持电压和不消耗额外面积的理想特性。

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来源
《2013 20th IEEE International Symposium on the Physical amp; Failure Analysis of Integrated Circuits》|2013年|720-723|共4页
会议地点 Suzhou(CN)
作者
Yuan Wang; Guangyi Lu; Jian Cao; Song Jia;
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作者单位

Key Laboratory of Microelectronic Devices and Circuits (MoE), Institute of Microelectronics, Peking University, Beijing, 100871, Chinac;

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原文格式 PDF
正文语种 eng
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关键词
Electrostatic discharge (ESD); dual-directional silicon controlled rectifier (dSCR); holding voltage; triggering voltage;

机译：静电放电（ESD）;双向可控硅整流器（dSCR）;保持电压;触发电压;;

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专利

1. SCR Device Fabricated With Dummy-Gate Structure to Improve Turn-On Speed for Effective ESD Protection in CMOS Technology [J] . Ming-Dou Ker, Kuo-Chun Hsu IEEE Transactions on Semiconductor Manufacturing . 2005,第2期

机译：采用虚拟门结构制造的SCR器件可提高开启速度，从而在CMOS技术中提供有效的ESD保护
2. Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology [J] . Yong-Seo Koo IEICE Electronics Express . 2011,第1期

机译：在0.13 / 0.18 / 0.35um工艺技术中基于SCR的ESD保护器件（PTSCR）的电气特性分析
3. Interferometric temperature mapping during ESD stress and failure analysis of smart power technology ESD protection devices [J] . Furbock C., Litzenberger M., Gornik E., Journal of Electrostatics . 2000,第3a4期

机译：智能电源技术ESD保护设备的ESD应力和故障分析期间的干涉式温度映射
4. Analysis of dummy-gate dual-directional SCR (dSCR) device for ESD protection [C] . Yuan Wang, Guangyi Lu, Jian Cao, IEEE International Symposium on the Physical Failure Analysis of Integrated Circuits . 2013

机译：用于ESD保护的虚设栅极双向SCR（DSCR）设备分析
5. Design, characterization and compact modeling of novel silicon controlled rectifier (SCR)-based devices for electrostatic discharge (ESD) protection applications in integrated circuits. [D] . Lou, Lifang. 2008

机译：新型基于硅的可控整流器（SCR）的器件的设计，表征和紧凑模型，用于集成电路中的静电放电（ESD）保护应用。
6. Robust and Latch-Up-Immune LVTSCR Device with an Embedded PMOSFET for ESD Protection in a 28-nm CMOS Process [O] . Ruibo Chen, Hongxia Liu, Wenqiang Song, 2020

机译：具有嵌入式PMOSFET的鲁棒和锁定的免疫LVTSCR器件用于28 nm CMOS过程中的ESD保护
7. Improvement on Turn-on Speed of Substrate-Triggered SCR Device by Using Dummy-Gate Structure for On-Chip ESD Protection [O] . Kuo-chun Hsu, Ming-dou Ker 2015

机译：利用虚拟门结构实现片上EsD保护，提高衬底触发可控硅器件的导通速度
8. Electromagnetic Pulse/Transient Threat Testing of Protection Devices for Amateur/Military Affiliate Radio System Equipment. Volume 3. Test Data, Electromagnetic Pulse Testing of Protection Devices. Section 7. Equipment and Devices Test Descriptions. [R] . Bodson, D., Frizzell, J., Higdon, T., 1985

机译：业余/军用无线电系统设备保护装置的电磁脉冲/瞬态威胁测试。第3卷。测试数据，保护装置的电磁脉冲测试。第7节。设备和器件测试说明。

Analysis of dummy-gate dual-directional SCR (dSCR) device for ESD protection

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