Transmit and receive amplifiers for e-band communications systems using GaAs pHEMT technology

摘要

Measured performance is given for a transmit and a receive amplifier MMIC fabricated using the WINsemi PP10 GaAs pHEMT process in the band 71 to 76 GHz. Small signal circuit measurements are compared with ‘first cut’ transistor and circuit models and demonstrate reasonable correlation. Model developments are currently underway to assess improvements to simulated data. Initial measured performance indicates that this process is suitable for applications to E band offering the potential for highly integrated affordable chipsets.