Thin germanium dioxide film with a high quality interface formed in a direct neutral beam oxidation process

摘要

Germanium dioxide (GeO2) thin film with a high-quality interface was directly formed by using a damage-free and low-temperature neutral beam oxidation (NBO) process. GeO2 film with little suboxide could be formed even at a low substrate temperature of 300°C because of the extremely low activation energy (Ea) oxidation resulting from bombardment with energetic oxygen neutral-beams of 5 eV. A high-quality GeO2/Ge interface with an low interface state density (Dit) of less than 1 × 10¹¹ cm⁻²eV⁻¹ was created by combining the NBO process with a hydrogen (H) radical native oxide removal treatment.