Control of crystal growth orientation by micro-thermal-plasma-jet induced melting and solidification of silicon films on porous silicon underlayer

摘要

Amorphous silicon (a-Si) films on porous silicon (PS) underlay er were melted and rapid solidification was induced by micro-thermal-plasma-jet (μ-TPJ) irradiation. Because the thermal conduction can be controlled by changing the porosity and the thickness of PS layer, a-Si films were easily melted by millisecond annealing. Crystallized Si films show a high crystalline volume fraction of ∼ 100 % and lower tensile stress compared to that of Si films crystallized on quartz substrates. In addition, crystallized Si films on PS layer show strong orientation to {100} direction, which suggests liquid phase epitaxial growth from PS layer.