Comparison of AC I-V characteristic of Si and SiC MOSFETs

摘要

A physical model for the AC I–V characteristics of high voltage MOS based power devices is presented here. A closed form expression is derived to predict the AC I–V characteristics based on the knowledge of widely used C-V measurement method used to characterize MOS interfaces. This model is then used to compare commercial Si and SiC high voltage power MOSFETs.