Novel source pocket Si Tunnel field effect transistor (TFET) is successfully fabricated by laser annealing. It shows reduced threshold voltage, steep subthreshold swing (46mV/dec), excellent ION/IOFF ratio (>107) and improved output characteristics due to dramatic reduction of tunneling resistance.
展开▼
机译:通过激光退火成功地制造了新型的源极口袋Si隧道场效应晶体管(TFET)。它显示出降低的阈值电压,陡峭的亚阈值摆幅(46mV / dec),出色的I ON inf> / I OFF inf>比(> 10 7 sup>)并得到了改善隧道电阻的显着降低带来了输出特性。
展开▼