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Tunnel field-effect transistor (TFET) based high-density and low-power sequential
Tunnel field-effect transistor (TFET) based high-density and low-power sequential
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机译:基于隧道场效应晶体管(TFET)的高密度和低功耗顺序
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摘要
Described is an apparatus which comprises: a first p-type Tunneling Field-Effect Transistor (TFET); a first n-type TFET coupled in series with the first p-type TFET; a first node coupled to gate terminals of the first p-type and n-type TFETs; a first clock node coupled to a source terminal of the first TFET, the first clock node is to provide a first clock; and a second clock node coupled to a source terminal of the second TFET, the second clock node is to provide a second clock.
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