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Characterization of a single-supply subthreshold FPGA

机译:单电源亚阈值FPGA的特性

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This paper presents a pair of field programmable gate array (FPGA) test chips optimized for subthreshold operation to maximize energy efficiency. Both chips were fabricated in the IBM 0.18 µm silicon-on-insulator (SOI) process using the same FPGA architecture; one making use of conventional static CMOS multiplexers and one using dynamic threshold MOS (DTMOS) multiplexers. Reliable subthreshold operation is achieved for both test chips by replacing conventional SRAM with variation-tolerant interruptible latches. For the chip with conventional multiplexers, testing across eleven dice showed an average minimum operating voltage of 300 mV. A 43X reduction in power delay product (PDP) was seen compared to 1.5V operation. For the DTMOS chip, testing across four dice showed an average minimum operating voltage of 260 mV. The test results show that the DTMOS chip is more reliable at sub-300 mV, consistent with simulations. Minimum energy analysis of both test chips suggests that the minimum energy point for the FPGA occurs at subthreshold voltages.
机译:本文介绍了一对针对亚阈值操作进行了优化以最大程度提高能量效率的现场可编程门阵列(FPGA)测试芯片。两种芯片都是使用相同的FPGA架构,以IBM 0.18 µm绝缘体上硅(SOI)工艺制造的。一种使用传统的静态CMOS多路复用器,另一种使用动态阈值MOS(DTMOS)多路复用器。通过用耐变化的可中断锁存器代替传统的SRAM,两个测试芯片均实现了可靠的亚阈值操作。对于具有常规多路复用器的芯片,在11个芯片上进行的测试显示平均最小工作电压为300 mV。与1.5V操作相比,功率延迟乘积(PDP)降低了43倍。对于DTMOS芯片,在四个管芯上进行测试显示平均最小工作电压为260 mV。测试结果表明,DTMOS芯片在低于300 mV的情况下更加可靠,与仿真一致。两种测试芯片的最小能量分析表明,FPGA的最小能量点出现在亚阈值电压以下。

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