A 300 mV 10 MHz 4 kb 10T subthreshold SRAM for ultralow-power application

摘要

Ultralow-power devices have become popular in recent years because of their use in a number of applications, such as medical devices and communications. For ultralow-power consideration, the crucial factors in SRAMs are stability and reliability. A number of researchers considered various configurations of bit-cells for SRAMs for subthreshold operations, with differential pair structure and single-ended 8T, 9T, and 10T to improve stability and reliability. This paper proposes a 10T differential bit-cell that can effectively separate the read and write operation paths. We used a high Vth NMOS in the write operation path to reduce the bit-line leakage current. We also used virtual ground (V_Vss) to reduce the bit-line leakage to ensure that the data can be read correctly. The proposed SRAM was composed of 16 blocks, and each block had four columns and 64 cells per bit-line in a column. This study implemented a 4 kb 10T subthreshold SRAM in 90 nm CMOS technology operating at 10 MHz and 300 mV, which exhibited power consumption of 4.25 μW and energy consumption of 0.85 pJ for one write and one read operation.