AN ULTRA LOW POWER, READ DECOUPLED-DIFFERENTIAL WRITE, 10T SRAM CELL WITH HIGHER READ/WRITE NOISE MARGIN

摘要

A static random memory cell with ten transistors is disclosed. The static random memory cell comprises at least two cross coupled inverters, a ground node connected to the ground, a storage node Q and a storage node QB. At least two access devices and at least two low threshold voltage devices connected at the read path are provided. A read operation of the static random memory cell may be carried out by turning ON the two low threshold voltage devices connected at the read path and the drain to source voltages of the two low threshold voltage devices are increased, resulting an improvement in read current to off current ratio. Further, a write operation may be carried out by turning OFF one of lower nMOS devices of two cross coupled inverters. The lower nMOS devices provide a stacking effect exhibiting reduced power consumption and enhanced read/write stability.