An Intra-cavity bottom emitting 1325 nm VCSEL using GaInAs / GaInP MQWs and AlGaInAs / InP DBRs for epitaxial fabrication

摘要

In this paper, a bottom emitting Ga0.586In0.414As / Ga0.252In0.748P MQW Intra-cavity Vertical Cavity Surface Emitting Laser (VCSEL) capable of emitting light output at 1325 nm has been designed. After a number of computations of the material gain and band gap energy it has been found that the ternary compound of Ga0.586In0.414As as the quantum well material and the lattice matched ternary compound material Ga0.252In0.748P as the barrier material are suitable for operating at 1325 nm. Ga0.252In0.748P has been used for the 2 SCH layers which is also lattice matched. Si doped Al0.6In0.4As has been used as the lattice matched p-cladding material and C doped Al0.5In0.5As has been used as the n-cladding material. The design has been based on building the laser on an InP substrate which is lattice matched with the bottom DBR layers made of lattice matched Al0.26Ga0.21In0.53As / InP (48 pairs). The top DBR structure has been designed using Al0.26Ga0.21In0.53As / InP (80 pairs) which is also lattice matched with the p-cladding material and the active region material. This design is aimed at fabricating the VCSEL using the widely used epitaxial technologies. The performance characteristics of the designed VCSEL show expected performance.