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Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

机译：使用MgO / Si Top DBR和GAINASP / INP底部DBR设计高速1310nm Algainas / AlGainas VCSEL

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Arnob Islam;
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1. Design and Realization of InP/AlGaInAs Multiple Quantum Well Ring Laser [J] . 谢生, 郭婧, 管坤, 天津大学学报（英文版） . 2014,第006期
2. A Novel Investigation on Using Strain in Barriers of 1.3 μm AlGaInAs-InP Uncooled Multiple Quantum Well Lasers [J] . Vahid Bahrami Yekta, Hassan Kaatuzian 理论物理通讯：英文版 . 2010,第009期
3. Designing a high speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si top DBR and GaInAsP/InP bottom DBR [J] . Arnob Islam, Saiful Islam American Journal of Optics and Photonics . 2014,第3期

机译：使用MgO / Si顶部DBR和GaInAsP / InP底部DBR设计高速1310nm AlGaInAs / AlGaInAs VCSEL
4. Designing an all epitaxial 1,550 nm intra-cavity VCSEL using GaInAsN/AlGaInAs in the active region and AlGaAsSb/AlAsSb in top and bottom DBRs [J] . Arnob Islam, Samiha Ishrat Islam, Saiful Islam Optical and quantum electronics . 2013,第11期

机译：使用有源区中的GaInAsN / AlGaInAs和顶部和底部DBR中的AlGaAsSb / AlAsSb设计全外延1,550 nm腔内VCSEL
5. Long-wavelength vertical-cavity surface-emitting lasers on InP with lattice matched AlGaInAs-InP DBR grown by MOCVD [J] . Nishiyama N., Caneau C., Hall B., IEEE journal of selected topics in quantum electronics . 2005,第5期

机译：通过MOCVD在具有晶格匹配的AlGaInAs-InP DBR的InP上长波长垂直腔表面发射激光器
6. An Intra-cavity bottom emitting 1325 nm VCSEL using GaInAs / GaInP MQWs and AlGaInAs / InP DBRs for epitaxial fabrication [C] . Samiha Ishrat Islam, Md.Mobarak Hossain Polash, Islam Saiful 2012 IEEE International Conference on Electron Devices and Solid State Circuit. . 2012

机译：使用GaInAs / GaInP MQW和AlGaInAs / InP DBR的腔内底部发射1325 nm VCSEL，用于外延制造
7. Short-cavity DBR lasers integrated with high-speed electroabsorption modulators using quantum well intermixing. [D] . Wang, Chad S. 2007

机译：短腔DBR激光器使用量子阱混合技术与高速电吸收调制器集成在一起。
8. Integrated Duo Wavelength VCSEL Using an Electrically Pumped GaInAs/AlGaAs 980 nm Cavity at the Bottom and an Optically Pumped GaInAs/AlGaInAs 1550 nm Cavity on the Top [O] . Samiha Ishrat Islam, Arnob Islam, Saiful Islam 2014

机译：集成双波长VCSEL底部使用电泵浦的GaInAs / AlGaAsAs 980 nm腔顶部使用光泵浦的GaInAs / AlGaInAs 1550 nm腔
9. Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3 μm AlGaInAs/AlGaInAs strain-compensated multiple-quantum-well laser diodes [O] . P. H. Lei 2012

机译：n型调制掺杂势垒和线性梯度成分GaInAsP中间层对1.3μmAlGaInAs / AlGaInAs应变补偿多量子阱激光二极管的影响

Designing a High Speed 1310nm AlGaInAs/AlGaInAs VCSEL using MgO/Si Top DBR and GaInAsP/InP Bottom DBR

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