A V-band power amplifier with 11.6dB gain and 7.8 PAE in GaAs 0.15#x00B5;m pHEMT process technology

摘要

In this paper, a two-stage power amplifier (PA) implemented in the GaAs 0.15µm pHEMT process technology for V-band applications is presented. The proposed PA adopts common-source topology for each stage and a parallel RC is inserted between stages for stability. This V-band PA achieves a measured small signal gain of 11.6dB and a saturated output power of 12.2dBm. The measured peak power added efficiency (PAE) is 7.8%, and its OP1dB is 12.3dBm. The power consumption of the proposed PA is 211mW from the 5V voltage supply.