Reliability of inversion channel InGaAs n-MOSFETs

摘要

Reliability of InGaAs inversion channel n-MOSFET is investigated by systematic PBTI (positive bias temperature instability) stresses. The very complicated degradation phenomena are totally different from Si based MOSFETs. The degradation is mainly contributed by the generation of border traps under stress with recoverable donor trap of energy density ΔDSOX^DONOR in the InGaAs energy gap with a tail extending to the conduction band energy, and with permanent acceptor trap of energy density ΔDSOX^ACCEPTOR in the conduction band energy with a tail extending to the energy gap. The border trap model can explain all the experimental details of the PBTI degradation phenomena.