A CIGS thin film solar cell with dual absorber layers

摘要

In this work, we made a CIGS thin film solar cell with dual absorber layers which added an InGaP layer between buffer layer and CIGS layer. That is, the conventional structure of ZnO/CdS/CIGS/Mo becomes the structure of ZnO/CdS/InGaP/CIGS/Mo. And we translate the thickness and doping concentration of the additional InGaP absorber layer to find out critical parameter. Due to the presence of the additional 0.06 μm thick InGaP layer with acceptor concentration 2 × 10¹⁶ cm⁻³, the increased efficiency is observed. According to simulations, the wavelength of EQE in 0.3 μm ∼ 0.5 μm for our proposed CIGS solar cell is improved when compared with the conventional CIGS solar cell. And the conversion efficiency increased from 9.27% to 11.18%.