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Small-feature-size Etching of InP/InGaAsP by inductively coupled plasma at ultra-low pressure

机译：超低压感应耦合等离子体对InP / InGaAsP的小尺寸蚀刻

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Deep etching for InP/InGaAsP based slotted photonic crystal by inductively coupled plasma at ultra-low pressure was studied. High-aspect-ratio of 28 for 60-nm-wide slots and 17 for air-holes with diameter of 200 nm was achieved, respectively.

机译：研究了超低压感应耦合等离子体对InP / InGaAsP基缝隙光子晶体的深腐蚀。对于60 nm宽的缝隙，高纵横比分别为28；对于直径为200 nm的气孔，高纵横比为17。

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《2012 17th Opto-Electronics and Communications Conference : Technical Digest 》|2012年|p.236- 237|共2页
会议地点 Busan(KR)
作者
Li Yongzhuo; Cui Kaiyu; Huang Yidong; Feng Xue; Wang Da; Zhang Wei;
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作者单位

Department of Electronic Engineering, State Key Laboratory of Integrated Optoelectronics, Tsinghua University, Beijing 100084, China;

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正文语种 eng
中图分类通信 ;
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专利

1. Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure [J] . Kaiyu Cui, Yongzhuo Li, Xue Feng, AIP Advances . 2013 ,第2期

机译：InP异质结构中高纵横比双缝光子晶体波导的超低压感应耦合等离子体刻蚀
2. Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching [J] . R. Zhang, Z. Ren, S. Yu Journal of Vacuum Science & Technology . 2008 ,第2期

机译：级联反应离子刻蚀/电感耦合等离子体刻蚀InGaAsP / InP双浅脊矩形环形激光光子集成电路的制备与表征
3. Fabrication and characterization of InGaAsP/InP double shallow-ridge rectangular ring laser photonic integration circuits by cascade reactive ion etching/inductively coupled plasma etching [J] . R. Zhang, Z. Ren, S. Yu Journal of Vacuum Science & Technology . 2008 ,第2期

机译：级联反应离子刻蚀/电感耦合等离子体刻蚀InGaAsP / InP双浅脊矩形环形激光光子集成电路的制备与表征
4. Small-feature-size Etching of InP/InGaAsP by inductively coupled plasma at ultra-low pressure [C] . Li Yongzhuo, Cui Kaiyu, Huang Yidong, Opto-Electronics and Communications Conference . 2012

机译：在超低压力下电感耦合等离子体的小型特征尺寸蚀刻InP / InGaAsp
5. Solution nebulization device (ultrasonic nebulizer) for inductively coupled plasma spectrometry and alternate plasma source (low-pressure inductively coupled plasma) for mass spectrometry. [D] . Castillano, Maria Theresa M. 1994

机译：溶液雾化设备（超声波雾化器）用于电感耦合等离子体光谱法，备用等离子体源（低压电感耦合等离子体）用于质谱法。
6. Comparative analysis of barium titanate thin films dry etching using inductively coupled plasmas by different fluorine-based mixture gas [O] . Yang Li, Cong Wang, Zhao Yao, 2014

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7. Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure [O] . Kaiyu Cui, Yongzhuo Li, Xue Feng, 2013

机译：利用超低压电感耦合等离子体刻蚀制备Inp异质结构中的高纵横比双槽光子晶体波导
8. Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)- Based Chemistries: Part II: InP, InGaAs, InGaAsP, InAs and AllnAs;Applied Surface Science [R] . Abernathy, C. R. , Han, J. , Hobson, W. S. , 1998

机译：在BCl（3）基化学中的III-V半导体的电感耦合等离子体蚀刻：第二部分：Inp，InGaas，InGaasp，Inas和allnas;应用表面科学

Small-feature-size Etching of InP/InGaAsP by inductively coupled plasma at ultra-low pressure

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