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Wafer-scale synthesis and transfer of high quality monolayer graphene for nanoelectronics

机译:晶圆级合成和高质量纳米电子单层石墨烯的转移

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Recent progress in synthesis of large area mono- or few layer graphene on copper catalyst[1] has enabled various fascinating sensor, optical and electrical applications.[2–4] The idea for graphene to be employed for next generation nanoelectronics, however, require high quality films with wafer-scale uniformity and low defect density. Here we report our progress on wafer-scale synthesis and transfer of low-defect monolayer graphene for field-effect transistors that will enable graphene nanoelectronics.
机译:在铜催化剂上合成大面积单层或很少层石墨烯的最新进展[1]使各种引人入胜的传感器,光学和电子应用成为可能。[2-4]石墨烯被用于下一代纳米电子学的想法要求具有晶圆级均匀性和低缺陷密度的高质量薄膜。在这里,我们报告了在晶圆级合成和用于场效应晶体管的低缺陷单层石墨烯的转移方面的进展,这将使石墨烯纳米电子学成为可能。

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