A III-V field effect transistor (FET) with hafnium oxide gate dielectric for the detection of deoxyribonucleic acid (DNA) hybridization

摘要

Field-portable DNA biosensors have the potential to greatly improve diagnosis of disease, forensic DNA analysis, food safety monitoring, and biowarfare detection. These sensors detect hybridization of complementary strands of DNA, one immobilized onto the sensor substrate and the other free in solution. Most DNA sensors suffer from lack of portability or the inability to process large numbers of samples in parallel. Field effect transistor (FET) based DNA sensors, which detect hybridization by sensing negative charges on target DNA through the field effect, have the potential for both high throughput and portable detection [1].