Thermally-assisted Ti/Pr0.7Ca0.3MnO3 ReRAM with excellent switching speed and retention characteristics

摘要

We proposed for the first time thermally-assisted resistive switching random access memory (ReRAM) device to overcome the voltage-time dilemma [1] using Ti/Pr0.7Ca0.3MnO3 (Ti/PCMO) with Ge2Sb2Te5 (GST) thermoelectric heater as well as thermal barrier (Fig. 1). “Thermoelectric heating effect” from GST/Ti junction [2] and “thermal barrier effect” from the heat confinement by GST and PCMO thermal insulators [3,4] successfully improved switching speed while “large effective Schottky barrier (SB) height (Фeff)” provided excellent robustness to high-temperature retention and read/set/reset disturbance characteristics (Fig. 2).