Nanoscale characteristics of single crystal zinc oxide nanowires

摘要

In this work, we report the growth and nanoscale characterization of single crystal zinc oxide nanowires synthesized by thermal chemical vapor deposition. Scanning electron microscopy, high-resolution transmission electron microscopy, x-ray diffraction, photoluminescence and Raman spectroscopy confirmed the high quality nature of the materials. To analyze their electrical properties, terahertz time domain spectroscopy was used. Atom probe tomography experiments and analysis were successfully developed and carried out, for the first time, on individual ZnO nanowires. This analysis revealed the incorporation of small concentration levels of atomic nitrogen homogeneously in nanowires grown when nitrogen gas was present during synthesis. Atom probe tomography can yield valuable information on the distribution of dopants and other impurities in wide bandgap semiconductor nanostructures and thus help understand better the material characteristics at the nanoscale.