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Synthesis and characterization of single-crystalline zinc tin oxide nanowires

机译:单晶氧化锌锡纳米线的合成与表征

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摘要

Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visibleear-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.
机译:首先使用基于阳极氧化铝(AAO)膜的电沉积和热处理方法合成结晶的氧化锌锡锡(ZTO;重锡掺杂量为33at%的氧化锌)纳米线,平均直径约为60nm 。根据场发射扫描电子显微镜(FE-SEM)的结果,合成的ZTO纳米线是高度有序的并且具有高的线堆积密度。 ZTO纳米线的长度约为4μm,长径比约为67.从能量色散光谱仪(EDS)观察到Zn /(Zn + Sn)原子比为0.67(约2/3)的ZTO纳米线。 X射线衍射(XRD)和相应的选定区域电子衍射(SAED)图案表明ZTO纳米线是六角形单晶。紫外/可见/近红外(UV / Vis / NIR)吸收的研究表明,ZTO纳米线是一种宽带半导体,带隙能为3.7eV。

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