Electronic structure of oxygen vacancy and poly-vacancy in α- and γ-Al2O3

摘要

Electronic structure of oxygen vacancies and poly-vacancies in high-k dielectric Al2O3 (α- and γ- phases) was calculated from the first principles. It was found, that oxygen vacancies can be both electron and hole trap in α- and γ-Al2O3. Our results give a reason to believe that high leakage current through ALD Al2O3 films may be caused by oxygen vacancies.