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Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

机译：SiO 2 / Si界面氧空位的动力学联系对于清除HfO 2 栅叠层中SiO 2 -IL的意义

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This work clarifies roles of substrate-Si in SiO-IL scavenging in HfO/SiO/Si gate stack experimentally, and points out a coupling effect of oxygen vacancy (V) with SiO/Si interface from thermodynamic viewpoint.

机译：这项工作通过实验弄清了衬底硅在清除HfO / SiO / Si栅堆叠中的SiO-IL中的作用，并从热力学角度指出了氧空位（V）与SiO / Si界面的耦合效应。

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《IEEE Silicon Nanoelectronics Workshop》|2015年|1-2|共2页
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Li Xiuyan; Yajima Takeaki; Nishimura Tomonori; Toriumi Akira;
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1. LOWER BOUNDS FOR SUP+INF AND SUP*INF AND AN EXTENSION OF CHEN-LIN RESULT IN DIMENSION 3 [J] . Samy Skander Bahoura 数学物理学报（英文版） . 2008,第004期
2. Effect of Si substrate on interfacial SiO2 scavenging in HfO2/SiO2/Si stacks [J] . Li Xiuyan, Yajima Takeaki, Nishimura Tomonori, Applied Physics Letters . 2014,第18期

机译：硅衬底对HfO 2 / SiO 2 / Si堆中界面SiO 2 清除的影响
3. xN y and SiO 2 dielectric layers and rear surface passivation by using SiO 2/SiO xN y stack layers with screen printed local Al-BSF for c-Si solar cells]]> [J] . Nagarajan Balaji, Huong Thi Thanh Nguyen, Cheolmin Park, Current applied physics: the official journal of the Korean Physical Society . 2018,第1期

机译：<！[CDATA [SIO x n Y 和SIO 2 介电层和后表面钝化使用SIO 2 / SIO X N Y 堆叠图层，带有C-Si太阳能电池的屏幕印刷本地AL-BSF]]>
4. Taipingite-(Ce), (Ce 7 3+, Ca 2) Σ 9Mg(SiO 4) 3[SiO 3(OH)] 4F 3, a new mineral from the Taipingzhen REE deposit, North Qinling Orogen, central China [J] . Kai Qu, Xianzhang Sima, Guang Fan, Geoscience frontiers . 2020,第6期

机译：Taipingite-（CE），（什么 7 3 + ，如 2 ）Σ 9 MG（SIO 4 ） 3 [SIO 3 （OH）] 4 F 3 ，Taipingzhen REE存款新的矿物质，中国中部北秦岭奥根根
5. Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks [C] . Li Xiuyan, Yajima Takeaki, Nishimura Tomonori, IEEE Silicon Nanoelectronics Workshop . 2015

机译：氧空位与SiO 2 2 -IL清除在HFO 2 栅极堆栈中的显着性的重要性
6. The logic of security dilemmas: A speech act analysis of the INF treaty negotiations. [D] . Frederking, Brian Keith. 1998

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Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

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