Simulation-based analysis of the Heat-Affected Zone during target preparation by pulsed- laser ablation through stacked silicon dies in 3D integrated System-in-Packages

摘要

The trends of 3D integration and System-in-Package (SiP) require the adaptation of target preparation methods for failure analysis of these complex integrated devices. Recent improvements in laser-based target preparation make laser cross-sections through several stacked silicon dies possible with remarkably small visible Heat-Affected Zones (HAZs). The distinct removal of Molding Compound (MC), silicon dies, and metal interconnects with a single laser source was demonstrated.