CMP Process Development For 3D-MIM Applications Based On TiN or WNC Electrodes

摘要

To deal with the continuous increase of chip component density, high density Metal-Insulator-Metal (MIM) capacitors are required for analog and Radio Frequency (RF) applications, Instead of introducing high-k materials (Ta_2O_5, HfO_2...), an alternative is to develop a three-dimensional (3D) architecture providing higher developed area and to introduce electrode material with high work function for low leakage current level like WN or WNC. These materials will change the CMP requirements in copper back-end integration. In this paper, we will present the integration flow of 3D capacitor with WNC top electrode and then discuss on material CMP strategy, which gives good performances on 3D MIM capacitor.