首页> 外文会议>2004 China-Japan Joint Meeting on Microwaves >An InGaP/GaAs HBT Transimpedance Amplifier with Cascode Structure for 10Gbps Optical Communication

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An InGaP/GaAs HBT Transimpedance Amplifier with Cascode Structure for 10Gbps Optical Communication

机译：具有级联结构的InGaP / GaAs HBT跨阻放大器，用于10Gbps光通信

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A transimpedance amplifier based on InGaP/GaAs HBTs have been developed and realized. It is applicable for bit rates of lOGbps. The cascode structure is applied for its high gain and bandwidth. The chip size of fabricated transimpedance amplifier is 1.5 X 1.5mm~2. The measurement result showed transimpedance gain of 41dB Ω and a -3dB bandwidth of 6.7GHz. The output reflection coefficient is better than -9 dB over the bandwidth of operation.

机译：已经开发并实现了基于InGaP / GaAs HBT的跨阻放大器。它适用于10Gbps的比特率。级联结构因其高增益和带宽而得到应用。制作的跨阻放大器的芯片尺寸为1.5 X 1.5mm〜2。测量结果显示互阻增益为41dBΩ，-3dB带宽为6.7GHz。在工作带宽上，输出反射系数优于-9 dB。

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来源
《2004 China-Japan Joint Meeting on Microwaves 》|2004年|P.151-154|共4页
会议地点 Harbin(CN)
作者
Zhipeng Yuan; Haifeng Sun; E Chenxi; Xinyu Liu;
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作者单位

Institute of Microelectronics of Chinese Academy of Sciences Beitucheng West Road 3# Beijing, P.R.China, 100029;

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会议组织
原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术 ;
关键词
TIA; HBT; cascode; InGaP;

机译：TIA; HBT;级联; InGaP;

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专利

1. Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/P/sub dc/ of 7.2 GHz/mW [J] . Wang J., Zhu X., Pavlidis D. Electronics Letters . 2006 ,第1期

机译：GBP / P / sub dc /为7.2 GHz / mW的低功率InP / GaAsSb / InP DHBT共源共栅跨阻放大器
2. High performance InGaP/GaAs HBTs for mobile communications [J] . Achouche M., Spitzbart T. Electronics Letters . 2000 ,第12期

机译：用于移动通信的高性能InGaP / GaAs HBT
3. InGaP/GaAs HBT POWER AMPLIFIER WITH CMRC STRUCTURE [J] . C. K. Poek, B. P. Yan, E. S. Yang Microwave and optical technology letters . 2005 ,第1期

机译：具有CMRC结构的InGaP / GaAs HBT功率放大器
4. An InGaP/GaAs HBT Transimpedance Amplifier with Cascode Structure for 10Gbps Optical Communication [C] . Zhipeng Yuan, Haifeng Sun, E Chenxi, China-Japan Joint Meeting on Microwaves . 2004

机译：具有用于10Gbps光通信的Cascode结构的InGaP / GaAs HBT Transpedance放大器
5. Fabrication of high power aluminum: Free 0.8 micron to 1.0 micron InGaAsP/InGaP/GaAs lasers for optical pumping [D] . Diaz, Jacqueline Estela 1997

机译：高功率铝的制造：用于光学泵浦的0.8微米至1.0微米的InGaAsP / InGaP / GaAs激光器
6. Internal luminescence efficiencies in InGaP/GaAs/Ge triple-junction solar cells evaluated from photoluminescence through optical coupling between subcells [O] . David M. Tex, Mitsuru Imaizumi, Hidefumi Akiyama, -1

机译：InGaP / GaAs / Ge三结太阳能电池的内部发光效率通过子电池之间的光耦合从光致发光评估
7. Test set-ups for fast measurement of monolithic integrated circuits from on-wafer to system. application to a novel GaAs monolithic transimpedance amplifier for high speed optical communication systems [O] . Dorta P., Salazar-Palma M., Casao J.A., 1992

机译：测试设置，用于快速测量从晶圆上到系统的单片集成电路。在新型GaAs单片互阻放大器中的应用

An InGaP/GaAs HBT Transimpedance Amplifier with Cascode Structure for 10Gbps Optical Communication

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