Ultra Broadband MEMS Switch on Silicon and GaAs Substrates

摘要

This paper reports on the performance of highly reliable dc to 110GHz low-voltage millimeter wave MEMS switches on GaAs and Si. The switch has demonstrated insertion loss less than 6dB and isolation better than 15dB up to 110GHz and a cold switching lifetime greater than 6.9x10~9 cycles. The design and fabrication methods used to achieve ultra broadband performance and high reliability are presented.