Failure Models and Comparison on Short-circuit Performances for SiC JFET and SiC MOSFET

摘要

Based on the traditional circuit models of SiC JFET and SiC MOSFET, failure models in short-circuit case for the two SiC devices have been presented. The failure models have considered the leakage currents inside the devices when the short-circuit occurs. For both of SiC JFET and SiC MOSFET, the leakage current between the drain and the source has been introduced. In addition, for SiC MOSFET, the gate leakage current has been included. Furthermore, the mobility dependent on the temperature and the electric-field strength is used to accurately describe the carrier behaviour in the channel of the two SiC transistors. The failure models of the two SiC transistors had been verified by the results from TCAD simulations and other's experimental results. With our failure models, the comparison of short-circuit performances between SiC JFET and SiC MOSFET have been conducted.