Deep Sub-micron CMOS ICI_DDQ Testing

摘要

The I_DDQ testign for deep sub-micron CMOS IC is investigated. Two isues of low supply voltage and subthreshold leakage current are considered.Based on the theoretical results, as COMS technology moves into deep sub-micron region, the gap between faulty I_DDQ and faulty-free I_DDQ can be seen to decrease in deep sub-micron region. Some of methods are provided to solve this problem, and can be used for deep sub-micron I_DDQ testing. The purpose of this paper is to analyze the effectiveness of I_DDQ testing in deep sub-micron CMOS IC.