Development of GaAs Pseudomorphic HEMTs At W-Band

机译：W波段GaAs拟态HEMT的开发

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Development of GaAs pseudomorphic HEMTs (PHEMTs) at W- band without using electron beam direct writing is described and obtained result is reported. The maximum oscillation frequency for the developed device is over 150 GHz . This is the first GaAs PHEMT at W-band fabricated by conventional ultra-violet photolithograph technique.

机译：描述了在不使用电子束直接写入的情况下在W波段GaAs伪晶HEMT（PHEMT）的开发，并报告了获得的结果。所开发设备的最大振荡频率超过150 GHz。这是通过传统的紫外光刻技术在W波段制造的第一款GaAs PHEMT。

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来源
《1996 4th international conference on millimeter wave and far infrared science and technology proceedings(ICMWFST'96)》|1996年|66-69|共4页
会议地点 Beijing(CN);Beijing(CN)
作者
Zhu Guoliang; Yuan Mingwen; Liu Chenhui; Qiu Wei; Nie Huijun;
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作者单位

Hebei Semiconductor Research Institute Shijiazhuang China;

Hebei Semiconductor Research Institute Shijiazhuang China;

Hebei Semiconductor Research Institute Shijiazhuang China;

Hebei Semiconductor Research Institute Shijiazhuang China;

Hebei Semiconductor Research Institute Shijiazhuang China;

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原文格式 PDF
正文语种 eng
中图分类微波与超高频技术;红外技术及仪器;
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专利

1. W-band monolithic pseudomorphic AlGaAs/InGaAs/GaAs HEMT CBCPW LNA [J] . Ton T.-N., Wang H. Electronics Letters . 1993,第20期

机译：W波段单片拟晶AlGaAs / InGaAs / GaAs HEMT CBCPW LNA
2. High-performance in W-band monolithic pseudomorphic InGaAs HEMT LNA's and design/analysis methodology [J] . Wang H., Dow G.S. IEEE Transactions on Microwave Theory and Techniques . 1992,第3期

机译：高性能W波段单片InGaAs HEMT LNA和设计/分析方法
3. High performance W-band low-noise pseudomorphic InGaAs HEMT MMIC amplifiers [J] . Tan K.L., Wang H. Electronics Letters . 1991,第13期

机译：高性能W波段低噪声InGaAs HEMT MMIC放大器
4. Development of GaAs pseudomorphic HEMTs at W-band [C] . Zhu Guoliang, Yuan Mingwen . 1996

机译：Ga波段GaAs假晶HEMT的发展
5. Breakdown behavior and optimization of AlGaAs/InGaAs pseudomorphic high electron mobility transistors. [D] . Palma, John Francis. 2011

机译：AlGaAs / InGaAs伪晶高电子迁移率晶体管的击穿行为和优化。
6. Model Development for Threshold Voltage Stability Dependent on High Temperature Operations in Wide-Bandgap GaN-Based HEMT Power Devices [O] . Huolin Huang, Feiyu Li, Zhonghao Sun, 2018

机译：宽带隙GaN基HEMT功率器件中取决于高温操作的阈值电压稳定性的模型开发
7. Gate recess engineering of pseudomorphic In0.30GaAs/GaAs HEMTs [O] . Cameron, N.I., Murad, S., McLelland, H., 1996

机译：假晶In0.30Gaas / Gaas HEmT的栅极凹陷工程

Development of GaAs Pseudomorphic HEMTs At W-Band

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