首页> 外文会议>1995 URSI international symposium on signals, systems, and electronics >DESIGN OF A HIGH GAIN POWER AMPLIFIER USING A BIAS DEPENDENT LARGE SIGNAL MESFET MODEL AND THE DESCRIBING FUNCTION TECHNIQUE
【24h】

DESIGN OF A HIGH GAIN POWER AMPLIFIER USING A BIAS DEPENDENT LARGE SIGNAL MESFET MODEL AND THE DESCRIBING FUNCTION TECHNIQUE

机译:利用偏置相关大信号MESFET模型设计高增益功率放大器和描述功能技术

获取原文
获取原文并翻译 | 示例

摘要

A MESFET power amplifier has been designed using a large-signal quasi-static model with bias dependent elements. This model has been derived from experimental S parameters and dc measurements.rnThe analysis and gain optimization of the amplifier is performed by using the describing function technique. Optimum bias device conditions in C class are obtained for maximum gain. Experimental results show an excellent agreement with the theoretical analysis.
机译:MESFET功率放大器是使用具有偏置相关元件的大信号准静态模型设计的。该模型是通过实验S参数和直流测量得出的。放大器的描述和增益优化是使用描述函数技术进行的。获得最大增益的C类最佳偏置器件条件。实验结果与理论分析吻合良好。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号